Projects:2021s1-13482 Nanoscale Devices for 6G Technologies - Revision history

A1754264: /* Current Components */

2021-10-25T06:43:20Z

‎Current Components

A1754059: /* Resonant Tunneling Diode (RTD) */

2021-10-24T17:17:37Z

‎Resonant Tunneling Diode (RTD)

A1754059: /* Structurs and Materials */

2021-10-24T16:51:41Z

‎Structurs and Materials

A1754059: /* Method */

2021-10-24T16:51:16Z

‎Method

A1754059: /* Method */

2021-10-24T16:50:59Z

‎Method

A1754059: /* Resonant Tunneling Diode (RTD) */

2021-10-24T16:49:08Z

‎Resonant Tunneling Diode (RTD)

A1754059: /* Resonant Tunneling Diode (RTD) */

2021-10-24T16:48:43Z

‎Resonant Tunneling Diode (RTD)

A1754059: /* Resonant Tunneling Diode (RTD) */

2021-10-24T16:24:57Z

‎Resonant Tunneling Diode (RTD)

A1754059: /* Background */

2021-10-24T16:14:04Z

‎Background

A1754264: /* Resonant Tunneling Diode (RTD) */

2021-10-23T04:10:29Z

‎Resonant Tunneling Diode (RTD)

@@ Line 84: / Line 84: @@
 ====Current Components====
-[[File:Current component of an NPN transistor.jpg|thumb|Figure 1: Current components of an NPN transistor]]
+[[File:Current component of an NPN transistor.jpg|thumb|Figure 1: Current components of an NPN transistor [1]]]
 Figure 1 [1] is a model of the current components of an NPN transistor, it is applicable for either BJT and HBT. The description of these components is given as the following:
 * I<sub>nE</sub>: Electron diffusion current injected at the EB junction

@@ Line 58: / Line 58: @@
 [[File:Matrix formulation.png|thumb|The matrix formulation describes a wave function that travels through a double-barrier structure.]]
-====Transmission coefficient====
+====Transmission Coefficient====
-In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.
+The quantum levels in the quantum well where if the incident electrons have the energy level close to them, the tunnelling probability can approach unity. In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.
-<br>
 ===Heterogeneous Bipolar Transistors (HBT)===

@@ Line 42: / Line 42: @@
 [[File:RTD_structure.png|100px|thumb]]
 <br>
-====Structurs and Materials====
+====Structures and Materials====
 Resonant tunnelling diode is one of the applications based on the resonant tunnelling phenomenon. The figure is the case of a typical double-barriers structure RTD. The undoped materials sandwich the middle undoped layer to form a quantum well. The barriers are in the same material and different from the well. undoped. The conducting layers are in the same materials as the quantum well, but heavily n-type doped.
 The combinations of the semiconductor materials that were used in the project are in the table below.
@@ Line 57: / Line 57: @@
 [[File:Matrix formulation.png|thumb|The matrix formulation describes a wave function that travels through a double-barrier structure.]]
 ====Transmission coefficient====
 In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.

@@ Line 55: / Line 55: @@
 | Al<small>0.72</small>Ga<sub>0.28</sub>N || GaN || 1.3 || 0.258•m<sub>0</sub> || 0.15•m<sub>0</sub> || 1.2×10<sup>18</sup>
 |}
-<br>
 [[File:Matrix formulation.png|thumb|The matrix formulation describes a wave function that travels through a double-barrier structure.]]
 ====Transmission coefficient====
 In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.
 ===Heterogeneous Bipolar Transistors (HBT)===

@@ Line 59: / Line 59: @@
 ====Transmission coefficient====
 In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.
 ===Heterogeneous Bipolar Transistors (HBT)===

@@ Line 40: / Line 40: @@
 ===Resonant Tunneling Diode (RTD)===
 RTD is one type of diode based on the quantum mechanical phenomenon, resonant tunnelling. The electrons can flow through the energy barriers with some probability, which is impossible in classical physics. And the tunnelling can happen in an instant. Its IV graph also indicates its negative resistance characteristic. Due to these features, RTD can operate over the THz theoretically.
 <br>
-[[File:Matrix formulation.png|thumb]]
+====Structurs and Materials====
 In order to analyse the tunnelling properties, the matrix formulation is taken in this project which is cited from the book written by Prof. Nelson Tansu.<ref>N. Tansu, "Ch.7: Numerical Formulation of Schrodinger's Wave Equation". Applied Quantum Mechanics for Engineers.</ref> This method treats the potentials to be discrete potential functions and assign them into regions. And the 1-D Schrödinger wave equations are used to find the numerical solution. This method is feasible also for the double barriers with a bias voltage applied.

@@ Line 31: / Line 31: @@
 | Rate requirements || 1Gb/s || 100Gb/s || 1Tb/s
 |}
 == Method ==