Projects:2021s1-13482 Nanoscale Devices for 6G Technologies

In telecommunications, 6G is the 6th generation standard for telecommunication that is currently under research and development for wireless communication technologies for supporting cellular data networks. It is the successor of the 5G network and will be significantly faster. The development of 6G communication technologies requires new devices that will access into Terahertz spectral range.

Introduction

Compared to 5G, the most outstanding difference between 5G and 6G is that 6G communication technology will access into Terahertz(THz) spectral range. To access the terahertz frequency spectral, we need electronic devices that can operate in the terahertz frequency environment. Some high-speed electronic devices such as High Electron Mobility Transistor (HEMT) has already been used at the top edge of the communication devices, and the result is successful. However, other high-speed electronic devices such as Heterogeneous Bipolar Transistors (HBTs), Resonance Tunneling Diodes (RTDs) have even better high-frequency performance.

Project team

Project students

• Zicong Wen
• Jiayue Liang

Supervisors

• Professor Nelson Tansu

Objectives

This project aims to research electronic devices that can support the 6G wireless telecommunication technology standard and analyse the frequency performance of the researched devices. Two devices were researched in this project, Heterogeneous Bipolar Transistor and Resonance Tunnelling Diode

References

[1] a, b, c, "Simple page", In Proceedings of the Conference of Simpleness, 2010.

[2] ...

References

[1] a, b, c, "Simple page", In Proceedings of the Conference of Simpleness, 2010.

[2] ...